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 SM220MH~SM2100MH
Elektronische Bauelemente 20 ~ 100 V 2.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product A suffix of "-C" specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. Low profile surface mounted application. in order to optimize board space. Low power loss and low forward voltage drop High surge, high current capability, and high efficiency. Fast switching for high efficiency. Guard-ring for overvoltage protection. Ultra high-speed switching Silicon epitaxial planar chip, metal silicon junction.
SOD-123MH
A B F D C
PACKAGING INFORMATION
Small plastic SMD package. Case: Molded plastic Epoxy: UL94-V0 rate flame retardant Weight: 0.0110 g (Approximately)
REF. A B C Millimeter Min. Max. 3.30 3.70 1.40 1.80 0.60 1.00
E
E
REF. D E F
1
Cathode
2
Anode
Millimeter Min. Max. 3.10 (MAX.) 0.80 (TYP.) 0.30 (TYP.)
MARKING CODE
Part Number SM220MH SM230MH SM240MH SM250MH Marking Code 22 23 24 25 Part Number SM260MH SM280MH SM2100MH Marking Code 26 28 20
MAXIMUM RATINGS (Ta = 25C unless otherwise specified.)
PART NUMBERS PARAMETERS
Recurrent Peak Reverse Voltage (Max.) RMS Voltage (Max.) Reverse Voltage (Max.) Forward Voltage (Max.) Forward Rectified Current (Max.) Peak Forward Surge Current
SYMBOL SM 220 MH SM 230 MH SM 240 MH SM 250 MH SM 260 MH SM 280 MH SM 2100 MH UNITS TESTING CONDITIONS
VRRM VRMS VR VF IO
20 14 20
30 21 30 0.50
40 28 40
50 35 50 0.70 2.0
60 42 60
80 56 80
100 70 100 0.85
V V V V A See Fig.1
8.3ms single half sine-wave superimposed on rated load (JEDEC method)
IFSM
40 0.5 10 85 160 -65 ~ 175, -55 to 125 -65 ~ 175, -55 to 150
A
Reverse Current (Max.) Thermal Resistance (Typ.) Diode Junction Capacitance (Typ.) Storage and Operating Temperature Range
IR RJA CJ TSTG, TJ
mA C/W pF C
VR=VRRM, Ta=25C VR=VRRM, Ta=125C Junction to ambient
f=1MHz and applied 4V DC reverse voltage
01-December-2008 Rev. A
Page 1 of 2
SM220MH~SM2100MH
Elektronische Bauelemente 20 ~ 100 V 2.0 Amp Surface Mount Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CHARACTERISTICS
2.4 2.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
MH 010 M2 ~S MH 025 MH 0SM 24 SM
MH ~S M2 40 M -M H~ H SM 26 0M H
1.6 1.2 0.8 0.4 0 0 20 40 60 80 100
0-
SM 22
0-
25
SM
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
~ MH 022 SM
10 3.0 1.0
28 SM
0-
M
H~
21 SM
00
-M
H
120
140
160
180
200
TJ=25 C Pulse Width 300us 1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
40
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
30
TJ=25 C 8.3ms Single Half Sine Wave JEDEC method
FORWARD VOLT AGE,(V)
20
10
FIG.5 - TYPICAL REVERSE
0 1 5 10 50 100
CHARACTERISTICS 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
700 600 500 400 300 200 100 0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
TJ=75 C
.1
TJ=25 C
.01
.05
.1
.5
1
5
10
50
100
.01 0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
01-December-2008 Rev. A
Page 2 of 2


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